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| AMMC - 6425 18 - 28 GHz Power Amplifier Data Sheet ChipSize:2500x1750m(100x69mils) ChipSizeTolerance:10m(0.4mils) ChipThickness:10010m(40.4mils) PadDimensions: 100x100m(40.4mils) Description TheAMMC-6425MMICisabroadband1Wpoweramplifier designedforuseintransmittersthatoperateinvarious frequencybandsbetween18GHzand28GHz.ThisMMIC optimizedforlinearoperationwithanoutputthirdorder intercept point (OIP3) of 38dBm. At 27GHz it provides 30dBm of output power (P-1dB) and 20dB of gain.The device has input and output matching circuitry for use in 50 environments.The AMMC-6425 also integrates atemperaturecompensatedRFpowerdetectioncircuit thatenablespowerdetectionof0.3V/W.DCbiasissimple andthedeviceoperatesonwidelyavailable5Vforcurrent supply (negative voltage only needed forVg). It is fabricatedinaPHEMTprocessforexceptionalpowerand gainperformance.Forimprovedreliabilityandmoisture protection,thedieispassivatedattheactiveareas. Features * Widefrequencyrange:18-28GHz * Highgain:20dB * Power:@27GHz,P-1dB=30dBm * Highlylinear:OIP3=38dBm * IntegratedRFpowerdetector * 5.0Volt,-0.6Volt,900mAoperation Applications * MicrowaveRadiosystems * SatelliteVSATandDBSsystems * LMDS&Pt-PtmmWLongHaul * 802.16&802.20WiMaxBWA * WLLandMMDSloops * Commercialgrademilitary * Can be driven by AMMC-6345, increasing overall gain. AMMC-6425 Absolute Maximum Ratings[1] Symbol Vd Vg Id Pin Tch Tstg Tmax Parameters/Conditions PositiveDrainVoltage GateSupplyVoltage DrainCurrent CWInputPower OperatingChannelTemp. StorageCaseTemp. MaximumAssemblyTemp. (60secmax) Units V V mA dBm C C C -65 -3 Min. Max. 7 0.5 1500 23 +150 +150 +300 Note: 1. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice. Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices AMMC-6425 DC Specifications/Physical Properties [1] Symbol Id Parameters and Test Conditions DrainSupplyCurrent (underanyRFpowerdriveandtemperature) (Vd=5.0V,VgsetforIdTypical) GateSupplyOperatingVoltage (Id(Q)=900(mA)) ThermalResistance[2] (Backsidetemperature,Tb=25C) Units mA Min. Typ. 900 Max. 1000 Vg qch-b V C/W -0.85 -0.7 8.9 -0.55 Notes: 1. AmbientoperationaltemperatureTA=25Cunlessotherwisenoted. 2. Channel-to-backsideThermalResistance(ch-b)=10C/WatTchannel(Tc)=107Casmeasuredusinginfraredmicroscopy.ThermalResistance atbacksidetemperature(Tb)=25Ccalculatedfrommeasureddata. AMMC-6425 RF Specifications [3, 4, 5] (TA= 25C, Vd=5V, Id(Q)=900 mA, Zo=50 ) Symbol Gain P-1dB P-3dB OIP3 RLin RLout Isolation Parameters and Test Conditions Small-signalGain[4] OutputPowerat1dBGainCompression OutputPowerat3dBGainCompression ThirdOrderInterceptPoint; Df=100MHz;Pin=-20dBm InputReturnLoss[4] OutputReturnLoss[4] Min.ReverseIsolation Units dB dBm dBm dBm dB dB dB Minimum 16.5 27.5 Typical 18.5 28.5 30 38 -15 -14 -45 Maximum Sigma 0.5 0.25 0.20 0.72 0.79 0.54 1.20 Notes: 3. Small/Large-signaldatameasuredinwaferformTA=25C. 4. 100%on-waferRFtestisdoneatfrequency=18,23,and28GHz.Statisticsbasedon1500partsample 5. Specificationsarederivedfrommeasurementsina50testenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera morenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. LSL LSL LSL 1. 1 1. 18 18. 19 19. 0 0. 1 8 9 8 9 Gain at 23 GHz P-1dB at 18 GHz P-1dB at 28 GHz TypicaldistributionofSmallSignalGainandOutputPower@P-1dB.Basedon1500partsampledoverseveralproductionlots. AMMC-6425 Typical Performances (TA = 25C, Vd =5.0 V, ID = 900 mA, Zin = Zout = 50 ) NOTE:Thesemeasurementsareina50testenvironment.Aspectsoftheamplifierperformancemaybeimproved overamorenarrowbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching. 0 S1[dB] 0 S1[dB] 0 - 0 S1[dB] 1 10 0 S11[dB] S[dB] P-1 PAE 0 P-1 [dBm], PAE [%] 0 Frequency [GHz] 0 -0 Return Loss [dB] -10 -1 -0 - S1 [dB] -0 0 1 1 0 Frequency [GHz] 0 -0 -0 1 10 1 18 0 Frequency [GHz] 8 0 Figure 1. Typical Gain and Reverse Isolation Figure 2. Typical Return Loss (Input and Output) Figure 3. Typical Output Power (@P-1dB) and PAE 1 1 10 Noise Figure [dB] OIP [dBm] 8 0 1 0 8 0 8 18 0 Frequency [GHz] 8 0 0 1 18 0 Freq [GHz] 8 Pout [dBm], PAE [%] 0 0 1 10 0 -10 Pout PAE Id 100 100 1000 800 00 00 00 0 - 0 10 Pin [dBm] 1 0 Figure 4. Typical Noise Figure Figure 5. Typical Output 3rd Order Intercept Pt. Figure 6. Typical Output Power, PAE, and Total Drain Current versus Input Power at 24GHz 0 ~+0C ~-0C ~+8C 0 - - ~+0C ~-0C ~+8C 0 ~+0C ~-0C ~+8C S [dB] -1 -1 S1 [dB] S11[dB] -10 -10 1 10 -0 -0 - 10 1 0 Frequency[GHz] 0 - 10 1 0 Frequency [GHz] 0 0 10 1 0 Frequency [GHz] 0 Figure 7. Typical S11 over temperature Figure 8. Typical S22 over temperature Figure 9. Typical Gain over temperature Id [mA] 0 8 P-1 [dBm] 0 P-1_8deg P-1_0deg P-1_-0deg 1 18 0 Frequency [GHz] 8 0 Figure 10. Typical One dB Compression over temperature Typical Scattering Parameters [1], (TA = 25C, Vd =5.0 V, ID = 900 mA, Zin = Zout = 50 ) S11 Freq GHz 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 dB -4.77 -5.67 -6.77 -8.16 -9.70 -11.04 -13.90 -14.16 -19.86 -16.32 -13.84 -21.35 -22.54 -23.13 -25.45 -27.23 -38.36 -18.85 -15.06 -14.11 -16.81 -16.00 -14.02 -13.52 -12.08 -10.93 -11.51 -10.60 -10.67 -10.48 -10.99 Mag 0.58 0.52 0.46 0.39 0.33 0.28 0.20 0.20 0.10 0.15 0.20 0.09 0.07 0.07 0.05 0.04 0.01 0.11 0.18 0.20 0.14 0.16 0.20 0.21 0.25 0.28 0.27 0.29 0.29 0.30 0.28 Phase 145.66 130.97 117.03 104.74 93.76 84.77 74.80 66.48 69.36 96.12 60.31 47.89 52.94 55.48 59.58 54.82 -42.96 158.91 126.93 108.49 95.01 109.15 102.50 100.80 86.48 74.66 65.72 57.43 45.03 35.93 26.62 S21 dB -53.38 -37.42 -22.52 -9.93 -2.15 9.06 21.25 21.63 21.48 20.95 19.30 19.02 18.34 18.28 18.81 19.92 21.61 22.63 22.12 21.09 18.89 14.73 8.77 2.40 -2.96 -8.45 -14.00 -19.54 -26.11 -31.72 -38.30 Mag 0.00 0.01 0.07 0.32 0.78 2.84 11.55 12.06 11.86 11.16 9.22 8.94 8.26 8.20 8.72 9.90 12.04 13.54 12.76 11.34 8.80 5.45 2.75 1.32 0.71 0.38 0.20 0.11 0.05 0.03 0.01 Phase 126.23 23.99 -13.38 -69.22 -124.28 -170.06 89.04 -23.06 -97.31 -168.63 133.48 79.55 31.75 -14.76 -61.07 -109.65 -163.47 128.31 62.15 -8.78 -81.20 -156.43 141.46 91.66 47.96 6.50 -30.13 -64.98 -93.67 -131.80 -145.33 S12 dB -53.10 -52.14 -50.29 -48.40 -49.37 -45.70 -47.72 -69.30 -52.15 -45.71 -39.74 -42.46 -44.82 -46.34 -45.51 -44.97 -43.15 -43.47 -45.87 -45.99 -45.81 -51.16 -65.60 -45.68 -40.91 -41.84 -40.86 -40.09 -36.49 -38.34 -37.42 Mag 2.21E-03 2.47E-03 3.06E-03 3.80E-03 3.40E-03 5.19E-03 4.11E-03 3.43E-04 2.47E-03 5.18E-03 1.03E-02 7.54E-03 5.74E-03 4.82E-03 5.30E-03 5.65E-03 6.96E-03 6.71E-03 5.09E-03 5.02E-03 5.12E-03 2.77E-03 5.25E-04 5.20E-03 9.00E-03 8.09E-03 9.06E-03 9.90E-03 1.50E-02 1.21E-02 1.35E-02 Phase 155.74 143.34 133.62 121.73 108.39 88.07 45.26 28.18 145.40 136.16 110.69 55.12 54.62 49.81 65.27 58.33 49.98 32.31 25.52 7.36 9.48 -35.61 132.49 126.36 97.83 55.30 57.18 57.35 31.06 25.14 -4.05 S22 dB -4.91 -6.13 -8.34 -8.28 -6.30 -9.55 -16.09 -30.03 -25.85 -16.56 -13.48 -21.91 -21.55 -21.24 -22.41 -21.28 -21.28 -45.87 -21.98 -15.18 -14.83 -19.37 -17.77 -17.03 -16.72 -15.45 -14.49 -13.05 -12.84 -11.87 -11.84 Mag 0.57 0.49 0.38 0.39 0.48 0.33 0.16 0.03 0.05 0.15 0.21 0.08 0.08 0.09 0.08 0.09 0.09 0.01 0.08 0.17 0.18 0.11 0.13 0.14 0.15 0.17 0.19 0.22 0.23 0.25 0.26 Phase 121.52 98.15 80.37 78.84 38.71 -10.55 -99.99 65.16 132.01 105.71 53.22 38.20 46.01 48.32 46.43 48.84 21.09 81.81 127.26 97.58 59.03 62.07 59.98 67.35 66.45 68.24 63.65 58.19 55.30 46.55 41.43 Note: 1. Dataobtainedfromon-wafermeasurements. Biasing and Operation TherecommendedquiescentDCbiasconditionforoptimum efficiency, performance, and reliability is Vd=5 voltswithVgsetforId=900mA.Minorimprovementsin performancearepossibledependingontheapplication. Thedrainbiasvoltagerangeis3to5.5V.AsingleDCgate supplyconnectedtoVgwillbiasallgainstages.Muting can be accomplished by setting Vg and /or Vg to the pinch-offvoltageVp. An optional output power detector network is also provided.The differential voltage between the Det-Ref andDet-OutpadscanbecorrelatedwiththeRFpower emergingfromtheRFoutputport.Thedetectedvoltage isgivenby: V = ( ref - Vdet )- Vofs V Assembly Techniques ThebacksideoftheMMICchipisRFground.Formicrostrip applicationsthechipshouldbeattacheddirectlytothe groundplane(e.g.circuitcarrierorheatsink)usingelectricallyconductiveepoxy[1] Forbestperformance,thetopsideoftheMMICshouldbe broughtuptothesameheightasthecircuitsurrounding it.This can be accomplished by mounting a gold plate metalshim(samelengthandwidthastheMMIC)under thechipwhichisofcorrectthicknesstomakethechip and adjacent circuit the same height. The amount of epoxyusedforthechipand/orshimattachmentshould bejustenoughtoprovideathinfilletaroundthebottom perimeterofthechiporshim.Thegroundplainshould be free of any residue that may jeopardize electrical or mechanicalattachment. whereVref isthevoltageatthe DET _ R port,Vdet isavoltage atthe DET _ O port,andVofs isthezero-input-poweroffset ThelocationoftheRFbondpadsisshowninFigure12. NotethatalltheRFinputandoutputportsareinaGroundvoltage.Therearethreemethodstocalculate: Signalconfiguration. 1. Vofs canbemeasuredbeforeeachdetectormeasurement(byremovingorswitchingoffthepowersource RFconnectionsshouldbekeptasshortasreasonableto and measuring ).This method gives an error due to minimize performance degradation due to undesirable seriesinductance.Asinglebondwireisnormallysufficient temperaturedriftoflessthan0.01dB/50C. forsignalconnections,howeverdoublebondingwith0.7 2. Vofs canbemeasuredatasinglereferencetemperature. mil gold wire or use of gold mesh [2] is recommended Thedrifterrorwillbelessthan0.25dB. forbestperformance,especiallynearthehighendofthe 3. Vofs caneitherbecharacterizedovertemperatureand frequencyband. storedinalookuptable,oritcanbemeasuredattwo Thermosonicwedgebondingispreferredmethodforwire temperaturesandalinearfitusedtocalculateatany attachmenttothebondpads.Goldmeshcanbeattached temperature.Thismethodgivesanerrorclosetothe usinga2milroundtrackingtoolandatoolforceofapmethod#1. proximately22gramsandaultrasonicpowerofroughly TheRFportsareACcoupledattheRFinputtothefirststage 55dBforadurationof76+/-8mS.Theguidedwedgeat andtheRFoutputofthefinalstage.Nogroundwiredare anuntrasonicpowerlevelof64dBcanbeusedfor0.7mil neededsincegroundconnectionsaremadewithplated wire.Therecommendedwirebondstagetemperatureis through-holestothebacksideofthedevice. 150+/-2C. CautionshouldbetakentonotexceedtheAbsoluteMaximumRatingforassemblytemperatureandtime. Thechipis100umthickandshouldbehandledwithcare. ThisMMIChasexposedairbridgesonthetopsurfaceand shouldbehandledbytheedgesorwithacustomcollet (donotpickupthediewithavacuumondiecenter). This MMIC is also static sensitive and ESD precautions shouldbetaken. Notes: [1] Ablebond84-1LM1silverepoxyisrecommended. [2] Buckbee-MearsCorporation,St.Paul,MN,800-262-3824 DET_R Vg Vd DQ DET_O RFout RFin Three stage 0.W power amplifier Figure 11. AMMC-6425 Schematic Figure 12. AMMC-6425 Bonding pad locations Vg (Optional) 0.1F 68pF Vd 0.1F Vg Vd DET_O RFOutput AMMC-6425 RFInput RFI RFO Vg 0.1F 68pF DET_R Vd 0.1F Vg Figure 13. AMMC-6425 Assembly diagram Vd Notes: 1. 1F capacitors on gate and drain lines not shown required. 2. Vg connection is recommended on both sides for devices operating at or above P1dB. 0.0 (DET_R)-(DET_O) [V] 0.0 0.0 0.0 0.10 0.00 0 10 1 0 RF Output Power [dBm] 0 1 (DET_R)-(DET_O) [V]] 0.1 0.01 0.001 Ordering Information: AMMC-6425-W10=10devicespertray AMMC-6425-W50=50devicespertray Figure 14. AMMC-6425 Typical Detector Voltage and Output Power, Freq=24 GHz For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries. Data subject to change. Copyright (c) 2006 Avago Technologies Pte. All rights reserved. 5989-3939EN - April 12, 2006 |
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